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| SD-SST210/214 Linear Integrated Systems N-CHANNEL LATERAL DMOS SWITCH Product Summary Part Number SD210DE SD214DE SST210 SST214 V(BR)DS Min(V) 30 20 30 20 VGS(th) Max (V) 1.5 1.5 1.5 1.5 rDS(on) Max() 45 @ VGS = 10V 45 @ VGS = 10V 50 @ VGS = 10V 50 @ VGS = 10V Crss Max (pF) 0.5 0.5 0.5 0.5 tON Max (ns) 2 2 2 2 Features * Ultra-High Speed Switching--tON: 1 ns * Ultra-Low Reverse Capacitance: 0.2 pF * Low Guaranteed rDS @5 V * Low Turn-On Threshold Voltage * N-Channel Enhancement Mode Benefits * High-Speed System Performance * Low Insertion Loss at High Frequencies * Low Transfer Signal Loss * Simple Driver Requirement * Single Supply Operation Applications * Fast Analog Switch * Fast Sample-and-Holds * Pixel-Rate Switching * DAC Deglitchers * High-Speed Driver Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for 10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. These MOSFETs do not have a gate protection Zener diode which results in lower gate leakage and voltage capability from gate to substrate. A poly-silicon gate is featured for manufacturing reliability. For similar products see: quad array--SD5000/5400 series, and Zener protected--SD211DE/SST211 series. Top View SD210DE SD214DE Top View SST210 SST214 Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted) Gate-Drain, Gate-Source Voltage ......................................................... 40 V Gate-Substrate Voltage ......................................................................... 30 V Drain-Source Voltage (SD210DE) ....................................... 30 V (SD214DE) ....................................... 20 V Source-Drain Voltage (SD210DE) ....................................... 10 V (SD214DE) ....................................... 20 V Drain-Substrate Voltage (SD210DE) ....................................... 30 V (SD214DE) ....................................... 25 V Source-Substrate Voltage (SD210DE) ....................................... 15 V (SD214DE) ....................................... 25 V Drain Current ........................................................................................ 50 mA Lead Temperature (1/16" from case for 10 seconds) ............................. 3000C Storage Temperature .................................................................... -65 to 1500C Operating Junction Temperature ................................................. -55 to 1250C Power Dissipationa .................................................................................................................................... 300 mW Notes: a. Derate 3 mW/0C above 250C Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 Specificationsa Notes: a. TA = 250C unless otherwise noted. b. B is the body (substrate) and V(BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 |
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